CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2008-07-29

2008-07-29

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S060000, C438S007000, C257SE27005

Reexamination Certificate

active

11319586

ABSTRACT:
A CMOS image sensor and a method for manufacturing the same are disclosed, in which a blue photodiode is imparted with a greater thickness to improve sensitivity of blue light. The blue photodiode of a CMOS image sensor includes a first lightly doped P-type epitaxial layer formed on a heavily doped P-type semiconductor substrate; a gate electrode of a transfer transistor formed on the first epitaxial layer; a first N-type blue photodiode region formed on the first epitaxial layer; and a second N-type blue photodiode region formed on the first epitaxial layer corresponding to the first blue photodiode region.

REFERENCES:
patent: 6489643 (2002-12-01), Lee et al.
patent: 7226803 (2007-06-01), Mouli et al.
patent: 62-269355 (1987-11-01), None
patent: 10-2002-0045864 (2002-06-01), None

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