Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-05-02
2006-05-02
Crane, Sara (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S078000, C438S424000, C438S377000
Reexamination Certificate
active
07037748
ABSTRACT:
A CMOS image sensor and a manufacturing method thereof, wherein the gates of several transistors of the CMOS image sensor are formed in an active region defined by an isolation region for a unit pixel of the CMOS image sensor, and a passivation layer composed of insulating layer is formed on the semiconductor substrate. Impurities are ion-implanted into the active region to form one or more diffusion regions of a photo diode of the CMOS image sensor, wherein the passivation layer prevents a boundary portion of the active region from being ion-implanted. Thus, damages by ion implantation at the boundary portion between the diffusion region for the photo diode and the isolation region are prevented, and the dark current of the CMOS image sensor is reduced.
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patent: 6486521 (2002-11-01), Zhao et al.
patent: 6521924 (2003-02-01), Han et al.
patent: 6849886 (2005-02-01), Han
patent: 2003-42303 (2003-05-01), None
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Crane Sara
Dongbuanam Semiconducor Inc.
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