CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2006-01-03

2006-01-03

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S237000

Reexamination Certificate

active

06982186

ABSTRACT:
A CMOS image sensor and a method for manufacturing the same, capable of preventing an interface between an active region and a field region in the CMOS image sensor from being damaged by ion implantation. The method comprises implanting dopant ions into a source region between a gate electrode of the reset transistor and the photodiode, using an ion implantation mask that covers predetermined locations of the field region and the source region.

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