CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2006-09-26

2009-02-10

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S066000, C438S070000

Reexamination Certificate

active

07488616

ABSTRACT:
A CIS and a method for manufacturing the same are provided. The CIS includes an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon; a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other; a metal sidewall formed to fill the predetermined interval between the plurality of the color filters; and a microlens formed on each of the plurality of color filters.

REFERENCES:
patent: 5631753 (1997-05-01), Hamaguchi et al.
patent: 6251700 (2001-06-01), Lin et al.
patent: 7235833 (2007-06-01), Chen
patent: 2006/0014314 (2006-01-01), Yaung et al.
patent: 2007/0052053 (2007-03-01), Lee
patent: 2003332544 (2003-11-01), None

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