CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2007-09-06

2009-11-10

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S292000, C257SE31053, C257SE31083, C257SE31085

Reexamination Certificate

active

07615838

ABSTRACT:
A CMOS image sensor and a method for manufacturing the same. In one example embodiment, a CMOS image sensor includes a field region and an active region, a second conductive bottom region, a first conductive well region, a second conductive top region, and a first conductive high concentration region. The field region and the active region are formed in a first conductive semiconductor substrate. The second conductive bottom region has a first depth in part of the active region. The first conductive well region is formed in the active region. The second conductive top region has a depth that is less than the first depth. The first conductive high concentration region has a depth that is less than the depth of the second conductive top region.

REFERENCES:
patent: 6744444 (2004-06-01), Minami et al.
patent: 7256469 (2007-08-01), Kanbe
patent: 2005/0139943 (2005-06-01), Kanbe
patent: 2005/0194655 (2005-09-01), Sakano et al.
patent: 2006/0076588 (2006-04-01), Nozaki
patent: 2007/0069260 (2007-03-01), Stevens
patent: 2000-31451 (2000-01-01), None

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