CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2006-12-12

2009-06-09

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257SE21545

Reexamination Certificate

active

07545020

ABSTRACT:
Embodiments relate to a CMOS image sensor. In embodiments, the CMOS image sensor may include a semiconductor substrate, a photodiode, a first conduction type impurity region, a first insulating layer, a conduction layer, and a second insulating layer. The semiconductor substrate may have a trench in which a device isolation layer is to be formed. The photodiode may be formed in an active region of the semiconductor substrate, and the first conduction type impurity region may be formed in sidewalls of the trench. The first insulating layer may be formed inside the trench, and a conduction layer may be formed inside the trench and doped with second conduction type impurities. A second insulating layer may be formed inside the trench.

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patent: 1641883 (2005-07-01), None
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