CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2006-12-26

2009-08-25

Sefer, Ahmed (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S291000, C257S292000, C257S432000, C257SE27132, C257SE27134, C438S432000

Reexamination Certificate

active

07579625

ABSTRACT:
A CMOS image sensor is provided. The CMOS image sensor can include: a plurality of photodiodes formed on a semiconductor substrate; an interlayer dielectric layer formed on an entire surface of the semiconductor substrate having the plurality of photodiodes; color filter layers including multi-layered blue color filter layers formed on the interlayer dielectric layer corresponding to respective photodiodes of the plurality of photodiodes; a planarization layer formed on the semiconductor substrate having the color filter layers; and microlenses formed on the planarization layer.

REFERENCES:
patent: 5708264 (1998-01-01), Hawkins et al.
patent: 2006/0145223 (2006-07-01), Ryu
patent: 2006/0187381 (2006-08-01), Yokozawa
patent: 2007/0145439 (2007-06-01), Han
patent: 1482501 (2004-03-01), None
patent: 1607675 (2005-04-01), None
patent: 2002-184965 (2002-06-01), None
patent: 10-2001-0037405 (2003-01-01), None

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