CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2007-08-24

2009-10-06

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C216S091000, C257SE21617

Reexamination Certificate

active

07598110

ABSTRACT:
A method for manufacturing a CMOS image sensor may include at least one of the following steps: Forming a salicide blocking layer on an entire surface of a semiconductor substrate having a photodiode area and a transistor. Forming a photoresist pattern inclined at an angle less 90° (e.g. between approximately 70° and approximately 80°) on and/or over a non-salicide area. Performing wet-etching on the salicide blocking layer using the photoresist pattern as an etching mask. Forming salicide on the salicide area after removing the photoresist pattern.

REFERENCES:
patent: 4931144 (1990-06-01), Brighton
patent: 6040593 (2000-03-01), Park
patent: 6793836 (2004-09-01), Tsung-Kuei et al.
patent: 7238562 (2007-07-01), Jang
patent: 2001/0003030 (2001-06-01), Jung et al.
patent: 2003/0196986 (2003-10-01), Tsung-Kuei et al.
patent: 2006/0051974 (2006-03-01), French et al.

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