CMOS image sensor and method for manufacturing the same

Details CMOS image sensor and method for manufacturing the same CMOS image sensor and method for manufacturing the same

2006-12-22

2008-12-02

Thomaqs, Tom (Department: 4166)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S292000

Reexamination Certificate

active

07459332

ABSTRACT:
A CMOS image sensor and method for fabricating same are provided. The CMOS image sensor can include a gate electrode formed on an active area of a first conductive type semiconductor substrate, on which a photodiode area and a transistor area are defined; a low-density second conductive type diffusion region formed on the photodiode area at a first side of the gate electrode; a high-density second conductive the diffusion region formed on the transistor area at a second side of the gate electrode; an insulating layer formed on the semiconductor substrate at both sides of the gate electrode with a thickness less than a thickness of the gate electrode, but greater than a thickness of a gate insulating layer; and insulating layer sidewalls formed on the insulating layer at both sides of the gate electrode.

REFERENCES:
patent: 6583043 (2003-06-01), Shroff et al.
patent: 7232712 (2007-06-01), Han
patent: 10-2002-0085068 (2004-07-01), None

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