CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2007-05-08

2007-05-08

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C438S197000, C438S287000, C438S591000, C257S290000, C250S208100

Reexamination Certificate

active

11001311

ABSTRACT:
A CMOS image sensor and a method for fabricating the same is disclosed, to improve reliability of a driving part transistor and to improve an output voltage of a photodiode, which includes a semiconductor substrate defined as a photodiode transistor region and a driving part transistor region; a first gate insulating layer on the photodiode transistor region of the semiconductor substrate; a second gate insulating layer on the driving part transistor region of the semiconductor substrate, wherein the second gate insulating layer is thicker than the first gate insulating layer; and gate electrodes on the respective first and second gate insulating layers.

REFERENCES:
patent: 5744823 (1998-04-01), Harkin et al.
patent: 6452212 (2002-09-01), Codama et al.
patent: 6580145 (2003-06-01), Wu et al.

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