CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2007-05-29

2007-05-29

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C438S073000, C257SE31001

Reexamination Certificate

active

11024312

ABSTRACT:
A complementary metal-oxide semiconductor (CMOS) image sensor and a method for fabricating the same are disclosed. The CMOS image sensor a plurality of photosensitive devices formed on a semiconductor substrate, an interlayer dielectric formed on the photosensitive devices, and a plurality of color filter layers facing into each interlayer dielectric and filtering light for each wavelength, a planarization layer formed on each of the color filter layers, and a micro-lens layer formed on the planarization layer and having a refractive index distribution, in which light is focused to the photosensitive device facing thereto, based on an ion injection profile.

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Office Action from the Japanese Intellectual Property Office, dated Jun. 19, 2006, in counterpart Japanese Patent Application No. 2004-376938.

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