CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2009-09-04

2011-10-04

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S432000, C257SE31127

Reexamination Certificate

active

08030116

ABSTRACT:
A CMOS image sensor and a method for fabricating the same are disclosed. The method includes forming a plurality of color filters on a substrate, each color filter having a curvature, and forming microlenses on the color filters that each has a radius of curvature that varies with the wavelength of the color filter on which it is formed.

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Eun Ji Kim; “CMOS Image Sensor Having Triple Micro-Lens Structure and Method for Manufacturing the Same”; Korean Patent Abstracts; Publication No. 1020060077064 A; Publication Date: Jul. 5, 2006; Korean Intellectual Property Office, Republic of Korea.
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