CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2006-06-07

2009-11-03

Fahmy, Wael (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C257S204000, C257S184000, C257S187000, C257S461000, C257SE21229, C257SE21224, C257S440000, C438S073000

Reexamination Certificate

active

07611918

ABSTRACT:
A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes: an epitaxial layer of a first conductivity type, formed in a semiconductor substrate of the first conductivity type; a blue photodiode region of a second conductivity type, formed in the epitaxial layer at a first depth; a green photodiode region of the second conductivity type, spaced apart from the blue photodiode region and formed in the epitaxial layer at a second depth larger than the first depth; and a red photodiode region of the second conductivity type, spaced apart from the green photodiode region and formed in the epitaxial layer at a third depth larger than the second depth.

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patent: 5965875 (1999-10-01), Merrill
patent: 6359323 (2002-03-01), Eom et al.
patent: 6632702 (2003-10-01), Eom et al.
patent: 2004/0080638 (2004-04-01), Lee
patent: 10-2002-0064890 (2004-04-01), None
patent: 10-2002-0086448 (2004-07-01), None

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