CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2006-06-26

2008-11-11

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S063000, C257S069000, C257S288000, C257SE21051, C257SE21056, C257SE21115, C257SE21182, C257SE21632

Reexamination Certificate

active

07449712

ABSTRACT:
A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level of impurities, an undoped silicon epitaxial layer formed over the SiGe epitaxial layer by epitaxial growth, and a photodiode region formed from a top surface of the undoped silicon epitaxial layer to a predetermined depth in the SiGe epitaxial layer.

REFERENCES:
patent: 5179430 (1993-01-01), Torikai
patent: 5557121 (1996-09-01), Kozuka et al.
patent: 6943051 (2005-09-01), Augusto et al.
patent: 2006/0157806 (2006-07-01), Rhodes

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