CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2005-12-30

2008-10-21

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE21596

Reexamination Certificate

active

07439095

ABSTRACT:
A CMOS image sensor includes a substrate including a sensing part and a peripheral driving part; a first insulating interlayer formed over an entire surface of the substrate; a first metal line formed on the first insulating interlayer in each of the sensing and peripheral driving parts; a second insulating interlayer formed over the entire surface of the substrate including the first metal line; a second metal line formed on the second insulating interlayer in each of the sensor and peripheral drive parts; an etch-stop layer formed over the entire surface of the substrate including the second metal line; a third insulating interlayer formed on the peripheral driving part of the etch-stop layer; a third metal line formed on the third insulating interlayer; a fourth insulating interlayer formed on the third insulating interlayer including the third metal line, to be disposed in the peripheral driving part; and a fourth metal line formed on the fourth insulating interlayer.

REFERENCES:
patent: 6507059 (2003-01-01), Chen et al.
patent: 10-2001-0061308 (2001-07-01), None
patent: 10-2001-0098505 (2001-11-01), None

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