CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2005-12-29

2008-03-18

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000

Reexamination Certificate

active

07344911

ABSTRACT:
A CMOS image sensor and a method for fabricating the same are provided, in which an N type region of a photodiode is prevented from adjoining a device isolation film and a dark current is reduced. The CMOS image sensor includes an interlayer dielectric film formed between a gate poly and a power line, a contact formed in the interlayer dielectric film, and an epitaxial layer connected with the contact and formed only in a blue photodiode region.

REFERENCES:
patent: 6706550 (2004-03-01), Lee et al.
patent: 6872975 (2005-03-01), Murade
patent: 10-2004-0059942 (2004-07-01), None

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