Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-12-29
2008-03-18
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S070000
Reexamination Certificate
active
07344911
ABSTRACT:
A CMOS image sensor and a method for fabricating the same are provided, in which an N type region of a photodiode is prevented from adjoining a device isolation film and a dark current is reduced. The CMOS image sensor includes an interlayer dielectric film formed between a gate poly and a power line, a contact formed in the interlayer dielectric film, and an epitaxial layer connected with the contact and formed only in a blue photodiode region.
REFERENCES:
patent: 6706550 (2004-03-01), Lee et al.
patent: 6872975 (2005-03-01), Murade
patent: 10-2004-0059942 (2004-07-01), None
Dongbu Electronics Co. Ltd.
McKenna Long & Aldridge LLP
Nguyen Cuong
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