CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2005-12-28

2008-03-11

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S065000, C438S070000, C257S433000, C257S434000

Reexamination Certificate

active

07341885

ABSTRACT:
A CMOS image sensor and method for fabricating the same improve image characteristics by eliminating the thickness of a planarization layer. The CMOS image sensor includes a semiconductor substrate; a plurality of active devices, provided in a predetermined surface of the semiconductor substrate, for generating electrical charges according to an amount of incident light; an insulating interlayer formed on an entire surface of the semiconductor substrate including the plurality of active devices; a color filter layer formed on the insulating interlayer, the color filter layer comprised of red, green, and blue color filter patterns for respectively filtering light according to wavelength, the color filter patterns arranged to correspond to the plurality of active devices; and a plurality of microlenses formed on the color filter layer, wherein the color filter layer is planarized so that each color filter pattern of the color filter layer is imparted with an equal height for receiving the plurality of microlenses.

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