CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2008-09-23

2008-09-23

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S060000, C438S075000

Reexamination Certificate

active

11302387

ABSTRACT:
A CMOS image sensor and a method for fabricating the same in which color balance is enhanced by forming photodiodes to have a depth varied according to the wavelength of incident light to be received through a color filter layer. The predetermined depth varies, from shallow to deep, as the wavelength of the band of incident light increases, such that the predetermined depth is shallowest for the shortest wavelength, e.g., blue light, of the bands of incident light and is deepest for the longest wavelength, e.g., red, of the bands of incident light.

REFERENCES:
patent: 6979588 (2005-12-01), Jeong et al.
patent: 2004/0080638 (2004-04-01), Lee
patent: 10-2002-0058459 (2002-07-01), None
patent: 10-2004-0036087 (2004-04-01), None
patent: 1020040059942 (2004-07-01), None

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