CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2008-03-25

2008-03-25

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S701000, C257SE21632

Reexamination Certificate

active

11320701

ABSTRACT:
An image sensor includes a semiconductor substrate; a pixel array disposed on the semiconductor substrate; and an insulating interlayer, formed on the semiconductor substrate, having a trench coinciding with the disposition of the pixel array, the trench having uniformly inclined inner sidewalls.

REFERENCES:
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patent: 2005/0127462 (2005-06-01), Rim et al.
patent: 2006/0183265 (2006-08-01), Oh et al.
patent: 2006/0240359 (2006-10-01), Liu
patent: 2007/0082423 (2007-04-01), Lee
patent: 2007/0152286 (2007-07-01), Ahn
patent: 03-286566 (1991-12-01), None
patent: 2004-071931 (2004-03-01), None

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