CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2007-11-13

2007-11-13

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000, C438S199000, C438S223000, C438S514000, C438S592000, C257S019000, C257S225000, C257S237000, C257S292000, C257S458000, C257SE21347, C257SE21106

Reexamination Certificate

active

11318502

ABSTRACT:
A CMOS image sensor and a method for fabricating the same are disclosed, in which a dead zone and a dark current are simultaneously reduced by selective epitaxial growth. The CMOS image sensor includes a first conductive type semiconductor substrate, a second conductive type impurity ion area, a gate electrode, an insulating film formed on an entire surface of the semiconductor substrate including the gate electrode and excluding the second conductive type impurity ion area, and a silicon epitaxial layer formed on the second conductive type impurity ion area and doped with first conductive type impurity ions.

REFERENCES:
patent: 2003/0127666 (2003-07-01), Lee
patent: 2005/0205904 (2005-09-01), Hong
patent: 2005/0277239 (2005-12-01), Han
patent: 10-2003-0002877 (2003-01-01), None

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