CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2007-08-07

2007-08-07

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S066000, C438S710000

Reexamination Certificate

active

11022827

ABSTRACT:
A complementary metal-oxide semiconductor (CMOS) image sensor and a method for fabricating the same are disclosed. The image sensor includes a sub-layer having a photodiode and a plurality of transistors formed thereon, a pad insulating layer formed on the sub-layer, a micro-lens formed on the pad insulating layer, the micro-lens including a first insulating layer having an uneven surface and a second insulating layer covering upper and side surfaces of a projected portion of the first insulating layer to form a dome shape, and a planarization layer formed on the micro-lens, and a color filter formed on the planarization layer.

REFERENCES:
patent: 6362498 (2002-03-01), Abramovich
patent: 6940654 (2005-09-01), Tang
patent: 05-335533 (1993-12-01), None
patent: 09-090104 (1997-04-01), None
patent: 2003-204050 (2003-07-01), None
patent: 2001-0061341 (2001-07-01), None
patent: 2003-0057676 (2003-07-01), None
Office Action from the Korean Intellectual Property Office, dated Feb. 14, 2006, in counterpart Korean Patant Application No. 2004-0055106.

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