CMOS image sensor and method for fabricating the same

Details CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same

2007-08-28

2007-08-28

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S065000, C438S070000

Reexamination Certificate

active

11315157

ABSTRACT:
A CMOS image sensor and a method for fabricating the same are disclosed, in which double microlenses are formed using materials having different refractive indexes to improve concentration efficiency of light, thereby improving the characteristics of the image sensor.

REFERENCES:
patent: 5321297 (1994-06-01), Enomoto
patent: 6831311 (2004-12-01), Uchida
patent: 2005/0029643 (2005-02-01), Koyanagi
patent: 05-048057 (1993-02-01), None
patent: 2003-204050 (2003-07-01), None

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