CMOS image sensor and method for detecting color sensitivity...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S292000, C257S461000, C257SE31052

Reexamination Certificate

active

10901381

ABSTRACT:
A CMOS image sensor and a method for detecting color sensitivity of red, green and blue light without using a color filter layer is disclosed, which includes a semiconductor substrate having an active region; a photodiode formed in the active region of the semiconductor substrate, and generating an optical electric charge in accordance with irradiation of light; an insulating interlayer formed on an entire surface of the semiconductor substrate; and a micro lens formed on the insulating interlayer in perpendicular to the photodiode, wherein, a back-bias voltage is applied to the semiconductor substrate to vary a width of a depletion area of the photodiode.

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patent: 4450466 (1984-05-01), Nishizawa et al.
patent: 6081018 (2000-06-01), Nakashiba et al.
patent: 6266038 (2001-07-01), Yoshida et al.
patent: 60257559 (1985-12-01), None

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