Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-02-20
2007-02-20
Richards, N. Drew (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S292000, C257S461000, C257SE31052
Reexamination Certificate
active
10901381
ABSTRACT:
A CMOS image sensor and a method for detecting color sensitivity of red, green and blue light without using a color filter layer is disclosed, which includes a semiconductor substrate having an active region; a photodiode formed in the active region of the semiconductor substrate, and generating an optical electric charge in accordance with irradiation of light; an insulating interlayer formed on an entire surface of the semiconductor substrate; and a micro lens formed on the insulating interlayer in perpendicular to the photodiode, wherein, a back-bias voltage is applied to the semiconductor substrate to vary a width of a depletion area of the photodiode.
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Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Richards N. Drew
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