CMOS image sensor and manufacturing method thereof

Details CMOS image sensor and manufacturing method thereof CMOS image sensor and manufacturing method thereof

2006-07-13

2009-06-09

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S059000, C438S063000, C438S197000, C438S234000, C257SE21001, C257SE21696, C257SE27131, C257SE27132, C257SE27133

Reexamination Certificate

active

07544530

ABSTRACT:
Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a gate electrode and a gate insulating layer; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming a buffer layer over the substrate, the buffer layer covering the photo diode region; forming first and second insulating layers over the entire surface of the substrate, the first and second insulating layer having a different etching selectivity from each other; forming an insulating sidewall on sides of the gate electrode by selective removal of the second insulating layer; removing the first insulating layer from the transistor region; forming a high-concentration diffusion region in the exposed transistor region, partially overlapping the second low-concentration diffusion region; and forming a metal silicide layer on the high-concentration diffusion region.

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People's Republic of China Office Action; Application No. 2006-10098796.4; Dated: Dec. 7, 2007; State Intellectual Property Office of People's Republic of China; People's Republic of China.

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