CMOS image sensor and manufacturing method thereof

Details CMOS image sensor and manufacturing method thereof CMOS image sensor and manufacturing method thereof

2005-12-05

2008-08-05

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S199000, C438S584000, C438S663000, C257SE27046

Reexamination Certificate

active

07407828

ABSTRACT:
A gate insulation layer with a high dielectric constant for a CMOS image sensor formed by a damascene process. A silicide layer on a gate electrode layer is formed in both a pixel region and a peripheral circuit region, and a silicide layer on a source/drain region is formed only in a peripheral circuit.

REFERENCES:
patent: 2002/0000623 (2002-01-01), Cho et al.
patent: 2006/0038241 (2006-02-01), Matsuo
patent: 10-2002-0025839 (2002-04-01), None
patent: 10-2003-0053158 (2003-06-01), None

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