CMOS image sensor and manufacturing method thereof

Details CMOS image sensor and manufacturing method thereof CMOS image sensor and manufacturing method thereof

2004-10-01

2008-10-07

Smith, Matthew S. (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S057000, C438S073000, C438S097000, C257SE21585, C257SE25032

Reexamination Certificate

active

07432125

ABSTRACT:
A CMOS image sensor-manufacturing method includes forming a photodiode on a substrate, forming an insulating layer over the substrate, forming a contact hole in the insulating layer, and forming a gate terminal over the insulating layer. The gate terminal is connected to the photodiode through the contact hole.

REFERENCES:
patent: 4977096 (1990-12-01), Shimada et al.
patent: 5675158 (1997-10-01), Lee
patent: 6297984 (2001-10-01), Roizin
patent: 6552320 (2003-04-01), Pan
patent: 2001/0052574 (2001-12-01), Kurosawa et al.
patent: 2002/0074481 (2002-06-01), McGrath et al.
patent: 10-2003-0073997 (2003-09-01), None
S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era vol. 1—Process Technology, Copyright 2000, Lattice Press, pp. 488-490, 655.

Affiliated with

Also associated with

Rating

CMOS image sensor and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS image sensor and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3997793