CMOS image sensor and manufacturing method thereof

Details CMOS image sensor and manufacturing method thereof CMOS image sensor and manufacturing method thereof

2006-10-31

2006-10-31

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S225000, C438S073000

Reexamination Certificate

active

07129108

ABSTRACT:
A CMOS image sensor according to the present invention includes a substrate having a light receiving region, an interlayer insulating film formed on the substrate, a plurality of metal wirings formed on the interlayer insulating film so as to expose the light receiving region, a protection layer coated on the metal wirings and the interlayer insulating film, and a plurality of color filters formed on the protection layer, wherein at least one of the color filters is provided with an isolation layer formed on an upper surface thereof.

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Satoshi Uchiya; Manufacture of Solid-State Colored Image Sensing Element; Patent Abstracts of Japan; Publication No. 02-003968; Publication Date Jan. 9, 1990; 1 Pg.; Japan Patent Office; 1998, 2003.

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