CMOS image sensor and fabricating method thereof

Details CMOS image sensor and fabricating method thereof CMOS image sensor and fabricating method thereof

2007-10-28

2009-11-24

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S066000

Reexamination Certificate

active

07622320

ABSTRACT:
A CMOS image sensor and method of fabricating the same are disclosed. The method comprises forming a plurality of polysilicon patterns on a silicon epitaxial layer which correspond to a plurality of photodiodes in a dummy pixel area, depositing a metal with a high melting point metal on the plurality of polysilicon patterns using a photoresist in an etching process, forming a silicide layer of the high melting point metal by removing the photoresist and then performing an ashing and rapid annealing process, sequentially forming a device protecting layer and a planarization layer on the silicon epitaxial layer and silicide layer, and forming a microlens on the planarization layer which corresponds to the silicide layer.

REFERENCES:
patent: 5448097 (1995-09-01), Mizushima et al.
patent: 5654565 (1997-08-01), Hokari
patent: 2006/0197169 (2006-09-01), Cole
patent: 2008/0173965 (2008-07-01), Cole
patent: 1322014 (2001-11-01), None

Affiliated with

Also associated with

Rating

CMOS image sensor and fabricating method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS image sensor and fabricating method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS image sensor and fabricating method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4054529