CMOS image sensor and fabricating method thereof

Details CMOS image sensor and fabricating method thereof CMOS image sensor and fabricating method thereof

2005-12-29

2008-05-27

Patton, Paul E (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C257S291000, C257S292000

Reexamination Certificate

active

07378295

ABSTRACT:
A CMOS image sensor and fabricating method thereof enable enhanced photo-response characteristics and protect a microlens in packaging by embedding the microlens in a passivation layer pattern. The image sensor may include a semiconductor substrate, a photodiode, a metal line, an insulating layer, a passivation layer pattern, and a microlens formed to be embedded in the passivation layer pattern.

REFERENCES:
patent: 5324623 (1994-06-01), Tsumori
patent: 6577342 (2003-06-01), Wester
patent: 6737626 (2004-05-01), Bidermann et al.
patent: 2004/0038443 (2004-02-01), Jiao
patent: 2006/0141660 (2006-06-01), Lee
patent: 10-2003-0001066 (2003-01-01), None

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