CMOS image sensor and fabricating method thereof

Details CMOS image sensor and fabricating method thereof CMOS image sensor and fabricating method thereof

2011-01-25

2011-01-25

Wilson, Allan R (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S292000, C257SE31127, C257SE21001

Reexamination Certificate

active

07875489

ABSTRACT:
A CMOS image sensor and a fabricating method for a semiconductor device are disclosed. Embodiments provide a CMOS image sensor having an improved structure using a light reflection system, with a fabricating method thereof to simplify the fabrication process and maximize a light receiving area. Embodiments may be applied to a semiconductor device having a lamination structure.

REFERENCES:
patent: 5425179 (1995-06-01), Nickel et al.
patent: 2007/0095565 (2007-05-01), Nagai et al.
patent: 2010/0155872 (2010-06-01), Park
patent: 09318850 (1997-12-01), None

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