CMOS image sensor and fabricating method thereof

Details CMOS image sensor and fabricating method thereof CMOS image sensor and fabricating method thereof

2011-07-12

2011-07-12

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE31127, C257SE27134, C257SE27135

Reexamination Certificate

active

07977143

ABSTRACT:
A CMOS image sensor and fabricating method thereof are disclosed. The method includes forming a plurality of photodiode regions on a semiconductor substrate, forming a plurality of color filters respectively corresponding to the photodiode regions, forming a planarization layer on the color filters, forming a protective layer on the planarization layer, and forming a microlens layer comprising a plurality of microlenses corresponding to the photodiode regions by depositing a low-temperature oxide layer on the protective layer and then patterning the low-temperature oxide layer. After the planarization layer is formed, the protective layer is formed by plasma processing. Thus, the planarization layer can be protected from chemical penetration via numerous pin holes in the microlens layer in the course of wet processing. Accordingly, the method prevents the microlens from lifting from the planarization layer.

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