CMOS image sensor

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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Reexamination Certificate

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10832313

ABSTRACT:
Provided is a photographing apparatus (CMOS image sensor) that enables enlarging the area that the PD occupies by making simple the layout within a pixel wherein a photo-electric conversion element and a plurality of CMOS transistors are laid out. The photographing apparatus is the one1wherein a photo-diode11constituting the photo-electric conversion element and a plurality of transistors12, 13, 14, and15are laid out in parallel in the column arrangement direction of the pixels10that are arrayed in the form of a lattice. In the apparatus, further, the pixels10are each arrayed in the way of being shifted half the length of the pixel10in the column arrangement direction every row. Within the pixel10, by arraying the photo-diode11and the plurality of transistors12, 13, 14, and15in parallel in the way that either arrangement thereof is positioned in one vertical column, it is possible to increase the occupied-area percentage of the photo-diode11as well as the width of the gate electrode of the transistor.

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patent: 6346696 (2002-02-01), Kwon
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patent: A2001-298177 (2001-10-01), None
patent: A2002-101341 (2002-04-01), None
patent: 2002-142149 (2002-05-01), None

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