CMOS FET device with abnormal current flow prevention

Details CMOS FET device with abnormal current flow prevention CMOS FET device with abnormal current flow prevention

1978-05-23

1979-09-18

Anagnos, Larry N.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307200B, 307213, 307251, 357 42, 328167, H03K 3353, H03K 1716, H03K 1760, H01L 2978

Patent

active

041684427

ABSTRACT:
A CMOS FET device which comprises an N type semiconductor substrate; a P type well layer formed in the N type semiconductor substrate; a p-channel type MOS transistor provided in the N type semiconductor substrate; an n-channel type MOS transistor formed in the P type well layer; and a noise-absorbing capacitor provided at the input or output terminal of the MOS transistor or at a power supply section.

REFERENCES:
patent: 3601625 (1971-08-01), Redwine et al.
patent: 3636385 (1972-01-01), Koepp
patent: 3665218 (1972-05-01), Andrews, Jr.
patent: 3712995 (1973-01-01), Steudel
patent: 3862441 (1975-01-01), Nabetani et al.
patent: 3934159 (1976-01-01), Nomiya et al.
patent: 3955210 (1976-05-01), Bhatia et al.
patent: 3967295 (1976-06-01), Stewart
patent: 4015147 (1977-03-01), Davidson et al.
Dennehy, "Non-Latching Integrated Circuits"; RCA Technical Notes (pub.) TN No.: 876; 2/12/71; 4 pp.
Staples, "Electrical Noise Spike Suppression"; IBM Tech. Discl. Bull.; vol. 15, No. 10, p. 3208; 3/73.
Clapper, "Bandpass Filter Using Differential Amplifier", IBM Tech. Discl. Bull.; vol. 14, No. 3, pp. 815-816, 8/71.

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