Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – With current flow along specified crystal axis
Reexamination Certificate
2007-12-25
2007-12-25
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
With current flow along specified crystal axis
C257S358000, C257S369000, C257S254000, C257S417000, C257S418000, C438S199000, C438S050000, C438S052000, C438S053000
Reexamination Certificate
active
09727296
ABSTRACT:
Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the <100> direction. Additionally, longitudinal tensile stress is applied to the channels.
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Armstrong Mark
Kuhn Kelin J.
Packan Paul A.
Schrom Gerhard
Thompson Scott
Blakely , Sokoloff, Taylor & Zafman LLP
Crane Sara
Gebremariam Samuel A
Intel Corporation
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