CMOS Device with silicided sources and drains and method

Details CMOS Device with silicided sources and drains and method CMOS Device with silicided sources and drains and method

1980-03-20

1982-06-22

Edlow, Martin H.

357 15, 357 23, 357 4, 357 59, H01L 2702

Patent

active

043365507

ABSTRACT:
A novel insulated gate field effect device is described wherein the device, having been formed from an island of semiconductive material on an insulative substrate, is characterized by the absence of discrete drain and source zones. The device further includes a gate structure and shallow metal silicided contact areas on the surface of the island adjacent the gate structure.

REFERENCES:
patent: 3958266 (1976-05-01), Athanas
patent: 3968272 (1976-07-01), Anand
patent: 4128670 (1978-12-01), Gaensslen
patent: 4141022 (1979-02-01), Sigg
Ames et al., IBM Tech. Bull., vol. 9, No. 10, Mar. 1967, p. 1470.

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