CMOS Device with ion-implanted channel-stop region and fabricati

Details CMOS Device with ion-implanted channel-stop region and fabricati CMOS Device with ion-implanted channel-stop region and fabricati

1980-05-27

1984-07-03

Clawson, Jr., Joseph E.

357 42, 357 59, 357 53, H01L 2978

Patent

active

044582625

ABSTRACT:
Integrated MOS devices with intermediate ion-implanted regions for minimizing device interaction. Several configurations are detailed; they are individually or, in combination, extremely useful in maximizing the density of ROM functions implemented in the integrated circuit format. In particular, one of the embodiments enhances the achievable density in a row-column array used in ROM memories. Used together, the embodiments are especially suited for a ROM of the CMOS genre.

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patent: 4282647 (1981-08-01), Richman
patent: 4285116 (1981-08-01), Meguro
patent: 4321616 (1982-03-01), Bise

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