CMOS device with both p+ and n+ gates

Details CMOS device with both p+ and n+ gates CMOS device with both p+ and n+ gates

1988-06-29

1989-12-26

James, Andrew J.

357 42, 357 59, 357 71, U01C 21283

Patent

active

048901415

ABSTRACT:
A CMOS device wherein the N-channel devices have n+ gates, and the P-channel devices have p+ gates. A TiN local interconnect system is used to connect the two types of gates, as well as providing connections to moat.

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