CMOS-compatible active pixel image array using vertical pnp cell

Details CMOS-compatible active pixel image array using vertical pnp cell CMOS-compatible active pixel image array using vertical pnp cell

1995-07-31

1998-01-06

Levy, Stuart S.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257592, 257291, H01L 3106, H01L 31062, H01L 31113, H01L 27082

Patent

active

057058466

ABSTRACT:
A preferred pnp bipolar phototransistor pixel element in accordance with the present invention has a p-type collector region formed in p-type semiconductor material. An n-type base region is formed in the collector region. A p-type emitter region is formed in the base region. An annular n-type capacitor region is formed in the base region surrounding and spaced-apart from the emitter region. Conductive material is disposed over the capacitor region and separated therefrom by underlying dielectric material to define the pixel element's coupling capacitor.

REFERENCES:
patent: 4531282 (1985-07-01), Sakai et al.
patent: 4866291 (1989-09-01), Shimada et al.
patent: 5065206 (1991-11-01), Nishizawa et al.
patent: 5243216 (1993-09-01), Noguchi et al.
patent: 5289023 (1994-02-01), Mead

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