CMOS compatable fabrication of power GaN transistors on a...

Details CMOS compatable fabrication of power GaN transistors on a... CMOS compatable fabrication of power GaN transistors on a...

2011-06-28

2011-06-28

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29246, C257SE29249

Reexamination Certificate

active

07968913

ABSTRACT:
In an AlGaN channel transistor formed on a <100> orientation silicon wafer, a hole with walls slanted at 54 degrees is etched into the silicon to provide a <111> orientation substrate surface for forming the AlGaN channel transistor.

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