Patent
1985-10-08
1986-05-27
Clawson, Jr., Joseph E.
357 43, 357 51, 357 68, H01L 2702
Patent
active
045918953
ABSTRACT:
A semiconductor device including a plurality of CMOS (Complementary Metal Oxide Semiconductor) elements, each comprised of a conventional source region, a drain region, and a diffusion region located adjacent to source and drain elements, and each driven by a power source. A first conductor and a second conductor, which are newly introduced in the present device, are physically independent from each other. The first conductor is connected between the power source and the source region. The second conductor is connected between the power source and the diffusion region.
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Suzuki et al., "A New Single-Chip C.sup.2 MOS A/D Converter for Microprocessor Systems-Penta-Phase Integrating C.sup.2 MOS A/D Converter, IEEE Journal of Solid-State Circuits, vol. SC-13, No. 6, Dec., 1978, pp. 779-785.
Ito Akihiko
Saito Tadahiro
Clawson Jr. Joseph E.
Fujitsu Limited
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