Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1974-12-23
1976-10-12
Heyman, John S.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307207, 307214, 307217, 307218, H03K 1908, H03K 1912, H03K 1928, H03K 1938
Patent
active
039860426
ABSTRACT:
Unique, relatively simplified circuits employing complementary metal oxide semiconductor transistors and suitable diode means to mechanize the Boolean functions A.sup.. B and A+B and combinations thereof. In a preferred embodiment, the transistors and diodes may be fabricated by silicon-on-sapphire integrated circuit techniques. The circuits obviate the need for a conventional NOR or NAND gate which is common to logic gating arrangements of the prior art. Hence, the number of components and the corresponding cost of the circuit are reduced while the operating speed thereof is increased.
REFERENCES:
patent: 3356858 (1967-12-01), Wanlass
patent: 3577005 (1971-05-01), Christensen
patent: 3676705 (1972-07-01), Meyer
patent: 3691401 (1972-09-01), Forlani et al.
patent: 3769523 (1973-10-01), Suzuki
patent: 3829710 (1974-08-01), Hirasawa et al.
patent: 3890512 (1975-06-01), Kumakawa et al.
boleky et al., "High-Performance Low-Power CMOS Memories Using Silicon-On-Sapphire Technology," IEEE J. Solid-State Circuits, vol. SC-7, pp. 135-145, 4/1972, As Reprinted in Semiconductor Memories, IEEE Press, pp. 84-94, 1972.
Luisi James A.
Padgett Clarence W.
Street Dana C.
Anagnos Larry N.
Fischer Morland Charles
Hamann H. Fredrick
Heyman John S.
Rockwell International Corporation
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