CMOS-Bipolar Darlington device

Details CMOS-Bipolar Darlington device CMOS-Bipolar Darlington device

1982-03-22

1985-10-15

Larkins, William D.

357 234, 357 42, 357 46, H01L 2706, H01L 2978, H01L 2970

Patent

active

045477914

ABSTRACT:
A semiconductor device having in a semiconductor body a Darlington amplifier comprising a vertical enhancement VMOS-transistor (T.sub.1) as input transistor and a vertical bipolar power transistor (T.sub.2) as output transistor. In order to increase the switching speed, a lateral enhancement MOS transistor (T.sub.3) of complementary conductivity type to the first transistor (T.sub.1) is connected in parallel with the emitter-base junction of the bipolar output transistor (T.sub.2). The gate electrodes of the first and second transistors are interconnected and associated with an input terminal E. Double and treble epitaxial layer structures are disclosed for integrating the device in the semiconductor body. The lateral third transistor (T.sub.3) may be provided either within or outside the area of an epitaxial layer forming the emitter zone of the second transistor (T.sub.2).

REFERENCES:
patent: 3636372 (1972-01-01), Hujita et al.
patent: 4164747 (1979-08-01), Gerstner
patent: 4286175 (1981-08-01), Baker
patent: 4329705 (1982-05-01), Baker
patent: 4356416 (1982-10-01), Weischedel
patent: 4360822 (1982-11-01), Roger

Affiliated with

Also associated with

Rating

CMOS-Bipolar Darlington device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS-Bipolar Darlington device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS-Bipolar Darlington device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2432016