CMOS-BiCMOS gate circuit

Details CMOS-BiCMOS gate circuit CMOS-BiCMOS gate circuit

1987-12-01

1989-12-26

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307451, 307570, H03K 1704

Patent

active

048900176

ABSTRACT:
A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar transistors are turned off.

REFERENCES:
patent: 3930169 (1975-12-01), Kuhn, Jr.
patent: 4103188 (1978-07-01), Morton
patent: 4719373 (1988-01-01), Masuda et al.
Lin et al., "Complementary MOS--Bipolar Transistor Structure", IEEE T.E.L.D., vol. ED--16, No. 11, Nov. 1969, pp. 945-951.

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