CMOS band gap reference circuit

Details CMOS band gap reference circuit CMOS band gap reference circuit

1991-09-30

1993-07-20

Voeltz, Emanuel T.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

3072961, 3072966, G05F 330

Patent

active

052297101

ABSTRACT:
A band gap reference circuit configuration includes first and second bipolar transistors having base-to-emitter voltages. An emitter resistor is connected to the first bipolar transistor. An operational amplifier is connected to the bipolar transistors for processing a difference generated between the base-to-emitter voltages of the first and second bipolar transistors to generate a largely temperature-independent reference voltage. The bipolar transistors are parasitic transistors, and the operational amplifier is constructed in MOS technology.

REFERENCES:
patent: 4263519 (1981-04-01), Schade, Jr.
A Low-Voltage CMOS Bandage Reference, Eric A. Vihoz & Olivier Neyroud, IEEE Journal of Solid-State Circuits, vol. SC 14, No. 3, Jun. 1979, pp. 573-577.
Publication Tietze-Schenk, "Halbleiter-Schaltungstechnik", (Electronic Circuits), 7th Ad., 1985, pp. 534-537.

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