CMOS aps with stacked avalanche multiplication layer and low...

Details CMOS aps with stacked avalanche multiplication layer and low... CMOS aps with stacked avalanche multiplication layer and low...

2008-05-13

2008-05-13

Villecco, John (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S217100, C348S299000, C348S301000, C348S310000, C257S438000, C250S208100

Reexamination Certificate

active

07372495

ABSTRACT:
An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components.

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