Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-03-31
1994-09-27
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 12, 257 28, 257183, H01L 2712, H01L 29161
Patent
active
053509307
ABSTRACT:
The invention relates to a microelectronic component with a component body determining the electronic properties of the component and functioning on the basis of a quantum wire or quantum point system. The the component body is formed of at least one, but in most cases a plurality of cluster molecules which adjoin one another, and the cluster molecules are formed of a metallic cluster nucleus and nonmetallic (insulating) ligand shell externally shielding and stabilizing the cluster nucleus. The cluster nucleus of the cluster molecules is formed of atoms of a transition metal, preferably silver (Ag), gold (Au), cobalt (Co), palladium (Pd), platinum (Pt), rhodium (Rh), Ruthenium (Ru).
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Physik in unserer Zeit (Physics Today), 23. 1993, vol. 4, pp. 159-165.
Scientific American, "Single Electronics", Jun. 1992, pp. 50-55.
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Spektrum der Wissenschaft, Issue 1991, p. 28 ff J. Vac. Sci. Technol., B 8 (2), 1990, 242, 245.
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Schmid Gunter
Schon Gunter
Simon Ulrich
Mintel William
Saadat Mahshid
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