Clover design lateral effect position-sensitive device

Details Clover design lateral effect position-sensitive device Clover design lateral effect position-sensitive device

1989-04-27

1989-12-12

Edlow, Martin H.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 20, 357 58, 357 68, 250211J, H01L 2714, H01L 2906, H01L 2348, H01J 4014

Patent

active

048871400

ABSTRACT:
Disclosed is an improved lateral effect position-sensitive device having a clover design and including a semiconductor body including a first doped surface-oriented region of one conductivity type, a second doped surface-oriented region of opposite conductivity type, and a layer of intrinsic semiconductor material separating the first region and the second region. The first region has concave boundaries and at least four vertices. A first plurality of electrical contacts electrically contacts the vertices, and a second plurality of contacts electrically contacts intermediate portions of the concave boundaries. Conductors electrically interconnect each of the second plurality of contacts with one of the first plurality of contacts.

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patent: 4629882 (1986-12-01), Matsuda et al.
United Detector Technology brochure for Position Sensing Photodetectors (date unknown).
Silicon Detector Corp. brochure for Position Sensors (date unknown).
Hamamatsu Corp. brochure for Position-Sensitive Detectors (1985).

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