Closed air gap interconnect structure

Details Closed air gap interconnect structure Closed air gap interconnect structure

2008-04-22

2008-04-22

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23145, C257SE23144, C257SE23167, C257SE21581, C257SE23160, C257S774000, C257S700000, C257S701000, C257S758000, C257S751000, C257S760000, C257S759000, C257S618000, C257S552000

Reexamination Certificate

active

10666564

ABSTRACT:
A closed air gap interconnect structure is described. The structure includes discrete regions of a permanent support dielectric under the interconnect lines so that the lines are substantially surrounded by air except for the discrete regions of the support dielectric and the optional interconnect vias located underneath. The lines and the lateral gap between them are straddled on top by a cap layer so that a closed air gap is formed. Several embodiments of this structure and methods to fabricate the same are also described.

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