Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Reexamination Certificate
2005-01-04
2005-01-04
Zarneke, David A. (Department: 2829)
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
C324S519000, C324S719000, C324S765010, C257S048000
Reexamination Certificate
active
06838869
ABSTRACT:
A characterization method for a device under test includes applying a bias voltage to a test circuit. The test circuit includes a first transistor coupled to the device under test, a second transistor coupled to the device under test and to the first transistor. A third transistor is coupled to a dummy device, a fourth transistor is coupled to the dummy device and to the third transistor. The transistors are of a common type. The characterization method further includes applying non-overlapping clocking signals to transistors of the test circuit to produce test signals for application to the device under test and detecting a current in one or more transistors from the device under test. The bias voltage is further varied to characterize the device under test.
REFERENCES:
patent: 6404222 (2002-06-01), Fan et al.
Chen et al (An On-Chip Attofarad Interconnect Charge-Based Capacitance Measurement (CBCM) Technique, Chen, J.C.; McGaughy, B.W.; Sylvester, D.; Chenming Hu, Electron Devices Meeting, International, Dec. 8-11, 1996, pp: 69-72).*
McGaughy et al (A Simple Method for On-Chip, Sub-Femto Farad Interconnect Capacitance Measurement, McGaughy, B.W.; Chen, J.C.; Sylvester, D.; Chenming Hu; Electron Device Letters, IEEE , vol: 18, Issue: 1, Jan. 1997, pp: 21-23).
Qian Mimi Xuefeng
Rogers David Michael
Tsao Roger Huazne
Van Buskirk Michael Allen
Advanced Micro Devices , Inc.
Kobert Russell M.
Zarneke David A.
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