Clock synchronous semiconductor memory device

Details Clock synchronous semiconductor memory device Clock synchronous semiconductor memory device

2005-05-17

2005-05-17

Phan, Trong (Department: 2818)

Static information storage and retrieval

Addressing

Sync/clocking

C365S230080

Reexamination Certificate

active

06894945

ABSTRACT:
An internal clock generating circuit generates internal clock signals at a double speed of an external clock signal in a test mode. An input/output circuit inputs/outputs data in a DDR mode in accordance with the double-speed internal clock signal. Particularly, an output drive signal CLKO has a frequency twice as high as that of the internal clock signal, and a data strobe signal DQS is generated as a signal having a frequency twice as high as that of an external data strobe signal. In such a manner, a semiconductor memory device which inputs and outputs data in a DDR mode at a speed twice as fast as that of an external clock signal can be achieved.

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